$A$ photodiode is a device

Consider the following statements $A$ and $B$ and identify the correct answer:
$A$. For a solar-cell,the $I-V$ characteristics lies in the $IV$ quadrant of the given graph.
$B$. In a reverse biased $pn$ junction diode,the current measured in $(\mu A)$ is due to majority charge carriers.

$A$ $CCD$ camera is fabricated using a semiconducting material having a band gap of $3 \ eV$. The wavelength of light it can detect is nearly (in $nm$)

When light shines on a $p-n$ junction diode,the current $I$ versus voltage $V$ is observed as in the figure below. In which quadrant$(s)$ does the diode generate power,so that it can be used as a solar cell?

$(i)$ Name the type of diode whose characteristics are shown in figure $(a)$ and figure $(b)$.
$(ii)$ What does the point $P$ in figure $(a)$ represent?
$(iii)$ What do the points $P$ and $Q$ in figure $(b)$ represent?

$A$ $p-n$ junction photodiode is fabricated from a semiconductor with a band gap of $2.5 eV$. It can detect a signal of wavelength: (Given: Planck's constant $h = 6.6 \times 10^{-34} Js$,speed of light $c = 3 \times 10^8 m/s$,elementary charge $e = 1.6 \times 10^{-19} C$)