$A$ crystal of intrinsic silicon at room temperature has a carrier concentration of $1.6 \times 10^{16} / m^3$. If the donor concentration level is $4.8 \times 10^{20} / m^3$,then the concentration of holes in the semiconductor is

  • A
    $53 \times 10^{12} / m^3$
  • B
    $4 \times 10^{11} / m^3$
  • C
    $4 \times 10^{12} / m^3$
  • D
    $5.3 \times 10^{11} / m^3$

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