In optical fiber communication, an $APD$ semiconductor is used for:

  • A
    Converting sound waves into optical waves
  • B
    Detecting the intensity of modulated signals
  • C
    Converting optical signals into electrical signals
  • D
    Converting electrical signals into optical signals

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$LED$ is constructed from $GaAsP$ semiconducting material. The energy gap of this $LED$ is $1.9\, eV$. Calculate the wavelength of light emitted and its colour.
$[h = 6.63 \times 10^{-34} \, Js$ and $c = 3 \times 10^{8} \, ms^{-1}]$

Explain the construction and working of a photodiode.

Statement $-1$: $A$ photodiode operates in reverse bias.
Statement $-2$: The fractional change due to the photo-effects on the minority carrier dominated reverse bias current is more easily measurable than the fractional change in the forward bias current.

$A$ photodetector is made from a semiconductor $In_{0.53}Ga_{0.47}As$ with $E_g = 0.73 \, eV$. What is the maximum wavelength,which it can detect in $nm$?

Consider a situation in which reverse biased current of a particular $P-N$ junction increases when it is exposed to light of wavelength $\lambda \le 621 \, nm$. During this process,enhancement in carrier concentration takes place due to the generation of hole-electron pairs. The value of the band gap is nearly (in $eV$):

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