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(B) In an $N$-type semiconductor,pentavalent impurity atoms are added to the intrinsic semiconductor (like $Si$ or $Ge$).These impurity atoms provide

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The donor energy levels $E_D$ are located very close to the conduction band energy level $E_C$.

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(B) In an $N$-type semiconductor,pentavalent impurity atoms are added to the intrinsic semiconductor (like $Si$ or $Ge$).These impurity atoms provide extra electrons for conduction.The energy levels associated with these donor atoms are called donor energy levels $(E_D)$.These levels are located just below the conduction band $(E_C)$ to facilitate the easy excitation of electrons into the conduction band at room temperature.Therefore,$E_D$ is located very close to $E_C$.

In an $N$-type semiconductor,where are the donor energy levels $E_D$ located?

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