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(A) In the first diagram (left),the donor energy level $E_D$ is located just below the conduction band $C$. This is characteristic of an $n$-type semi

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$n$-type semiconductor,intrinsic semiconductor,$p$-type semiconductor

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(A) In the first diagram (left),the donor energy level $E_D$ is located just below the conduction band $C$. This is characteristic of an $n$-type semiconductor.In the second diagram (middle),the Fermi level $E_F$ is located exactly in the middle of the forbidden energy gap between the valence band $V$ and the conduction band $C$. This is characteristic of an intrinsic semiconductor.In the third diagram (right),the acceptor energy level $E_A$ is located just above the valence band $V$. This is characteristic of a $p$-type semiconductor.Therefore,the sequence from left to right is: $n$-type semiconductor,intrinsic semiconductor,$p$-type semiconductor.

The band diagrams for three different semiconductors are shown in the figure below. Starting from the left to the right,identify the types of semiconductors they represent.

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