The ratio of forward bias resistance to reverse bias resistance of a $P-N$ junction is approximately .......

For the circuit shown in the figure,the equivalent resistance between points $A$ and $B$ for two cases $(i)$ $V_A > V_B$ and (ii) $V_B > V_A$ is $\qquad \Omega$ and $\qquad \Omega$ respectively. ($D_1$ and $D_2$ are ideal diodes)

For the diagram shown,the resistance between points $A$ and $B$ when the ideal diode '$D$' is forward biased is '$R_1$' and that when reverse biased is '$R_2$'. The ratio $\frac{R_1}{R_2}$ is

In the circuit given below,the value of the current is

In a $p-n$ junction diode, the thickness of the depletion layer is $2 \times 10^{-6} \,m$ and the barrier potential is $0.3 \,V$. The intensity of the electric field at the junction is

In the following figure,the diodes which are forward biased,are