The diode voltage is $0.5 \ V$ and the maximum power rating is $100 \ mW$. To obtain the maximum current in the circuit,the value of $R$ should be .......... $\Omega$.

When forward bias is applied to a $p-n$ junction,then what happens to the potential barrier $(V_B)$ and the width $(X)$ of the depletion region?

If a $p-n$ junction diode is forward biased, then:

In the following circuit,the equivalent resistance between $A$ and $B$ is ..... $\Omega$.

Two sides of a semiconductor germanium crystal $A$ and $B$ are doped with arsenic and indium respectively. They are connected to a battery as shown in the figure. The correct graph between current and voltage for the arrangement is:

In a $p-n$ junction, an electric field of $5 \times 10^5 \ V/m$ exists in the depletion region. The minimum kinetic energy of a conduction electron, in order to diffuse from $n$-side to the $p$-side, is found to be $3.2 \times 10^{-20} \ J$. The width of the depletion region is,