A certain p-n junction,having a depletion reg | vedclass

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(A) The breakdown electric field $E$ in a $p-n$ junction is a characteristic property of the material and is independent of the depletion width. Given

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$5$

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(A) The breakdown electric field $E$ in a $p-n$ junction is a characteristic property of the material and is independent of the depletion width. Given,the breakdown voltage $V_1 = 100 \,V$ for a depletion width $d_1 = 20 \,\mu m$. The electric field $E$ is given by $E = \frac{V}{d}$. Since the breakdown field $E$ remains constant,we have: $\frac{V_1}{d_1} = \frac{V_2}{d_2}$ Substituting the given values: $\frac{100 \,V}{20 \,\mu m} = \frac{V_2}{1 \,\mu m}$ $5 	imes 10^6 \,V/m = \frac{V_2}{1 	imes 10^{-6} \,m}$ $V_2 = 5 \,V$. Thus,the Zener diode can be used for voltage regulation of $5 \,V$.

$A$ certain $p-n$ junction,having a depletion region of width $20 \,\mu m$,was found to have a breakdown voltage of $100 \,V$. If the width of the depletion region is reduced to $1 \,\mu m$ during its production,then it can be used as a zener diode for voltage regulation of .......... $V$.

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