$A$ junction diode has a resistance of $50 \, \Omega$ when forward biased and $5000 \, \Omega$ when reverse biased. The current in the arrangement shown in the figure will be

In which of the following figures is the $p-n$ junction diode reverse biased?

What is forward bias and reverse bias?

Given below are two statements: one is labelled as Assertion $A$ and the other is labelled as Reason $R$.
Assertion $A$: $A$ diode under reverse-biased condition provides very small current which is nearly independent of voltage until a critical limit at which the current increases drastically.
Reason $R$: Below the critical voltage limit, only majority charge carriers flow which increases drastically above critical voltage.

In a $p-n$ junction diode, an electric field of magnitude $2 \times 10^5 \ V/m$ exists in the depletion region. $A$ particle with charge $-3e$ can diffuse from $n$-side to $p$-side, if it has a minimum kinetic energy of $0.6 \ eV$. The width of the depletion region of the $p-n$ junction is: (in $nm$)

What is breakdown voltage and saturation current?