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(D) Arsenic $(As)$ is a pentavalent impurity (group $15$ element). When germanium $(Ge)$ is doped with arsenic,it creates an $N$-type semiconductor. T

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$X$ is $N$-type,$Y$ is $P$-type and the junction is reverse biased.

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(D) Arsenic $(As)$ is a pentavalent impurity (group $15$ element). When germanium $(Ge)$ is doped with arsenic,it creates an $N$-type semiconductor. Thus,$X$ is $N$-type.Indium $(In)$ is a trivalent impurity (group $13$ element). When germanium $(Ge)$ is doped with indium,it creates a $P$-type semiconductor. Thus,$Y$ is $P$-type.In the circuit diagram,the $N$-type semiconductor $(X)$ is connected to the positive terminal of the battery,and the $P$-type semiconductor $(Y)$ is connected to the negative terminal of the battery.When the $N$-side is connected to the positive terminal and the $P$-side is connected to the negative terminal,the $P-N$ junction is said to be reverse biased.

$A$ semiconductor $X$ is made by doping a germanium crystal with arsenic $(Z=33)$. $A$ second semiconductor $Y$ is made by doping germanium with indium $(Z=49)$. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct?

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