An $npn$ transistor operates as a common emitter amplifier with a power gain of $10^{6}$. The input circuit resistance is $100\, \Omega$ and the output load resistance is $10\, k\Omega$. The common emitter current gain $\beta$ will be (Round off to the nearest integer).

In an $NPN$ transistor circuit,the collector current is $10 \,mA$. If $90\%$ of the electrons emitted reach the collector,the emitter current $(i_E)$ and base current $(i_B)$ are given by

In which section of a transistor is the doping concentration highest to produce a large number of majority charge carriers?

In a common emitter transistor amplifier, an input signal of $10 \ mV$ is applied. Due to this signal, the change in base current is $50 \ \mu A$ and the corresponding change in collector current is $5 \ mA$. If the load resistance in the collector-emitter circuit is $5 \ k\Omega$, the change in output voltage will be ..... $V$.

In a $P-N-P$ transistor,the emitter has ....... as majority carriers and the base has ....... as majority carriers.

$A$ transistor is used in an amplifier circuit in common emitter mode. If the base current changes by $100 \,\mu A$, it brings a change of $10 \,mA$ in collector current. If the load resistance is $2 \,k \Omega$ and input resistance is $1 \,k \Omega$, the value of power gain is $x \times 10^{4}$. The value of $x$ is . . . . . . .