An $N-$type and $P-$type silicon can be obtained by doping pure silicon with

  • A
    Arsenic and Phosphorous
  • B
    Indium and Aluminium
  • C
    Phosphorous and Indium
  • D
    Aluminium and Boron

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In a $p$-type semiconductor,the acceptor level is at $50 \text{ meV}$ above the valence band. To produce one hole,the maximum wavelength of the light photon required is (Planck's constant,$h = 6.6 \times 10^{-34} \text{ Js}$ and speed of light in vacuum,$c = 3 \times 10^8 \text{ m/s}$) (in $\mu \text{m}$)

In a $P$-type semiconductor, the acceptor level is $57 \, meV$ above the valence band. What is the wavelength of light in $\mathring{A}$ required to create a hole? (Given: $h = 6.6 \times 10^{-34} \, J \cdot s$, $c = 3 \times 10^8 \, m/s$, $1 \, eV = 1.6 \times 10^{-19} \, J$)

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Let $n_e$ be the number density of electrons and $v_d$ be the drift velocity in a semiconductor. When the temperature is increased:

In an intrinsic semiconductor at room temperature,the number of electrons and holes are

In an $n$-type semiconductor, the Fermi energy level lies

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