Diffusion current in a p-n junction is greate | vedclass

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Question

(A) In a $p$-$n$ junction,the diffusion current is caused by the movement of majority charge carriers across the junction,while the drift current is c

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The junction is forward-biased.

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(A) In a $p$-$n$ junction,the diffusion current is caused by the movement of majority charge carriers across the junction,while the drift current is caused by the movement of minority charge carriers due to the electric field of the depletion region.When the junction is forward-biased,the potential barrier is reduced,which allows a significantly larger number of majority charge carriers to diffuse across the junction. Consequently,the diffusion current increases exponentially with the applied forward voltage,making it much larger than the drift current.In contrast,under reverse bias,the potential barrier increases,suppressing the diffusion current,while the drift current remains relatively constant and dominant.

Diffusion current in a $p$-$n$ junction is greater than the drift current in magnitude when:

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