For a $pn$ junction,the width of the space charge region (depletion layer) is approximately $\qquad$ $\mu m$.

The cut-in voltage for a silicon diode is approximately $V$.

Which of the following is correct with respect to the following statements? Due to diffusion of electrons from $n$ to $p$-side:
$I$. electrons are accumulated in the depletion region.
$II$. electron drift current is from $p$-side to $n$-side.
$III$. an ionised donor is left in the $n$-region.
$IV$. electrons of $n$-side come to $p$-side and electron-hole combination takes place in $p$-side.
Select the correct option from the following.

If in a $p-n$ junction diode,a square input signal of $10\, V$ (varying from $+5\, V$ to $-5\, V$) is applied as shown,then the output signal across $R_L$ will be:

Determine $V_{CE}$ in the following silicon-based transistor circuit. (in $V$)

$A$ realistic graph depicting the variation of the reciprocal of input resistance $(1/r_i)$ in an input characteristics measurement in a common emitter transistor configuration is: