For a transistor amplifier,the power gain and voltage gain are $7.5$ and $2.5$ respectively. The value of the current gain will be:

$A$ transistor is operating in the active mode. $v_1$ is the potential barrier across the base-emitter junction and $v_2$ is the potential barrier across the collector-base junction. $b_1$ is the width of the depletion layer of the base-emitter junction and $b_2$ is the width of the collector-base junction.

Which one of the operations of $n-p-n$ transistor differs from that of $p-n-p$ transistor?

Consider an amplifier circuit wherein a transistor is used in common emitter mode. The change in collector current and base current respectively are $4 mA$ and $20 \mu A$ when a signal of $40 mV$ is added to the base-emitter voltage. If the load resistance is $10 k\Omega$, then the power gain in the circuit is:

For a $CE$ amplifier,the current gain is $60$. If the load resistance is $5 \times 10^3 \ \Omega$ and the input resistance is $5 \times 10^2 \ \Omega$,then the voltage gain is .......

For a $CE$ transistor amplifier,the audio signal voltage across the collector resistance of $2.0\,k\Omega$ is $2.0\,V$. Suppose the current amplification factor of the transistor is $100$. What should be the value of $R_B$ (in $k\Omega$) in series with $V_{BB}$ supply of $2.0\,V$ if the $dc$ base current has to be $10$ times the signal current?