For an $n-p-n$ transistor structure, which of the following statements is $NOT$ true?

  • A
    Emitter is heavily doped and moderate in size
  • B
    Base is lightly doped and thin in size
  • C
    Collector is lightly doped and large in size
  • D
    Collector is moderately doped and large in size

Explore More

Similar Questions

In a transistor amplifier,the voltage gain is

In a transistor amplifier, a change of $0.2 \text{ mA}$ in the base current causes a change of $5 \text{ mA}$ in the collector current. If input resistance is $2 \text{ k}\Omega$ and voltage gain is $75$, the load resistance used in the circuit is

For $I_b = 20 \ \mu A$ and $\beta = 100$,the value of the emitter current is ........ $mA$.

$A$ transistor having $\alpha = 0.99$ is used in a common base amplifier. If the load resistance is $4.5 \, k\Omega$ and the dynamic resistance of the emitter junction is $50 \, \Omega$,the voltage gain of the amplifier will be:

In a transistor (common emitter configuration) the ratio of power gain to voltage gain is ($\alpha$ and $\beta$ are current ratios)

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo