Given below are two statements: one is labell | vedclass

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(C) In a $p-n$ junction,the diffusion current is caused by the movement of majority charge carriers (holes from $p$ to $n$ and electrons from $n$ to $

Vedclass · Accepted Answer

$A$ is correct but $R$ is not correct.

Vedclass · Answer

(C) In a $p-n$ junction,the diffusion current is caused by the movement of majority charge carriers (holes from $p$ to $n$ and electrons from $n$ to $p$).When the junction is forward biased,the barrier height decreases,leading to a significant increase in the diffusion current,which becomes much larger than the drift current.Therefore,Assertion $A$ is correct.The diffusion current flows from the $p$-side to the $n$-side because holes move from $p$ to $n$ and electrons move from $n$ to $p$ (the direction of conventional current is the direction of positive charge flow).Reason $R$ states that the diffusion current is from the $n$-side to the $p$-side,which is incorrect.Thus,$A$ is correct but $R$ is not correct.

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