If $N_A$ is the number density of acceptor atoms added and $N_D$ is the number density of donor atoms added to a semiconductor,and $n_e$ and $n_h$ are the number density of electrons and holes in it,then:
- A$n_e = N_D, n_h = N_A$
- B$n_e = N_A, n_h = N_D$
- C$n_e + N_D = n_h + N_A$
- D$n_e + N_A = n_h + N_D$
Explore More
Similar Questions
For pure $Ge$,the intrinsic carrier density is $10^{19} \ m^{-3}$. If donor impurity is added with a density of $10^{23} \ m^{-3}$,what will be the hole density (in $m^{-3}$)?
Easy
View SolutionThrough a semiconductor,an electric current is due to the drift of
Easy
View SolutionIn a $p$-type semiconductor,which of the following statements is true?
The contribution in the total current flowing through a semiconductor due to electrons and holes are $\frac{3}{4}$ and $\frac{1}{4}$ respectively. If the drift velocity of electrons is $\frac{5}{2}$ times that of holes at this temperature,then the ratio of concentration of electrons and holes is
Difficult
View SolutionWhen phosphorus and antimony are mixed in germanium,then:
Easy
View SolutionVedclass Products
For Students
Vedclass Test Series
Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.
Start Free TrialFor Teachers
Exam Paper Generator
Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.
Try FreeFor Institutes
Online Exam Module
Live online exams with unlimited students, 360° analytics & white-label branding.
See Demo