If the potential barrier across a $p-n$ junction is $0.6\,V$,then the electric field intensity in the depletion region having a width of $6 \times 10^{-6}\,m$ will be $......\times 10^{5}\,N/C$.

The barrier potential of a $P-N$ junction diode does not depend on:

$A$ $P-N$ junction has a potential barrier of $0.5 \ V$. If the depletion region is $5 \times 10^{-7} \ m$ wide,what will be the intensity of the electric field in this region?

The built-in potential of a $p-n$ junction diode is $0.7 \,V$. If the diode is forward biased and the applied voltage is $0.3 \,V$, the effective barrier height is (in $\,V$)

The voltage-current characteristic of a diode during forward bias is given by $I = 7.8 \times 10^{-5} e^{6.5 V_D}$, where $I$ is the current in $mA$ and $V_D$ is the diode voltage in $V$. Find the dynamic resistance of the diode in $\Omega$, when the current is $4 \ mA$.

Find the magnitude of current in the given circuit. (in $A$)