In a $P-N$ junction diode,if the $P$ region is more heavily doped than the $n$ region,then the depletion layer is:

The figure shows a circuit in which three identical diodes are used. Each diode has a forward resistance of $20\,\Omega$ and an infinite backward resistance. Resistors $R_1 = R_2 = R_3 = 50\,\Omega$. The battery voltage is $6\,V$. The current through $R_3$ is.....$mA$.

In a $p-n$ junction diode,change in temperature due to heating

In a forward biased $PN$-junction diode,the potential barrier in the depletion region is of the form...

$A$ potential barrier of $0.50 \ V$ exists across a $P-N$ junction. If the depletion region is $5.0 \times 10^{-7} \ m$ wide,the intensity of the electric field in this region is:

The current-voltage relation of a diode is given by $I = \left( {{e^{\frac{{1000V}}{T}}} - 1} \right) \, mA$,where the applied voltage $V$ is in volts and the temperature $T$ is in Kelvin. If a student makes an error of $\pm 0.01 \, V$ while measuring the voltage to obtain a current of $5 \, mA$ at $300 \, K$,then the error in the value of the current in $mA$ is.....$mA$