In a forward bias arrangement of a $p-n$ junction diode,the
- A$p$-region is connected to the positive terminal of the battery.
- B$n$-region is connected to the positive terminal of the battery.
- C$p$-region is connected to the negative terminal of the battery.
- D$n$-region is connected to the negative terminal of the battery.
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For a $p-n$ junction,the intensity of the electric field is $1 \times 10^{6} \text{ V/m}$ and the width of the depletion region is $5000 \text{ Å}$. The value of the potential barrier is $\dots \text{ V}$.
In the given circuit,two ideal diodes are connected in parallel in opposite directions. What is the current $I$ flowing in the circuit (in $A$)?
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View SolutionTo make a $PN$ junction conducting,
The $I-V$ characteristic of a $P-N$ junction diode is shown in the figure. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $1\;V$ is applied is.......$\Omega$.
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View SolutionIn a $p-n$ junction diode, an electric field of magnitude $2 \times 10^5 \ V/m$ exists in the depletion region. $A$ particle with charge $-3e$ can diffuse from $n$-side to $p$-side, if it has a minimum kinetic energy of $0.6 \ eV$. The width of the depletion region of the $p-n$ junction is: (in $nm$)
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