In a light emitting diode $(LED)$,light is emitted due to:

  • A
    drifting of electrons.
  • B
    diffusion of holes.
  • C
    recombination of holes and electrons.
  • D
    emission of holes and electrons.

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$A$ $p-n$ junction is fabricated from a semiconductor with a band gap of $2.8 \ eV$. What approximate wavelength can it $NOT$ detect (in $nm$)?
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Which one of the following statements is $WRONG$ regarding $LED$?

The $V-I$ characteristics of an $LED$ are correctly shown by which graph?

The photodiode is used to detect optical signals. These diodes are preferably operated in reverse biased mode because:

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