In a reverse biased diode, when the applied voltage changes by $1 \, V$, the current is found to change by $0.5 \, \mu A$. The reverse bias resistance of the diode is

Avalanche breakdown is due to

In the forward bias arrangement of a $PN-$junction diode:

If a $p-n$ junction diode is forward biased,then:

The current $i$ in the circuit will be:

$A$ potential barrier of $0.4 \,V$ exists across a p-n junction. An electron enters the junction from the $n$-side with a speed of $6.0 \times 10^{5} \,ms^{-1}$. The speed with which the electron enters the $p$-side will be $\frac{x}{3} \times 10^{5} \,ms^{-1}$. The value of $x$ is ..............
(Given: mass of electron $= 9 \times 10^{-31} \,kg$,charge on electron $= 1.6 \times 10^{-19} \,C$.)