In an n-type semiconductor,the free electrons | vedclass

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(C) In an $n$-type semiconductor,pentavalent impurity atoms (like $P, As, Sb$) are added to the intrinsic semiconductor (like $Si$ or $Ge$).These impu

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the band gap and are close to the conduction band.

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(C) In an $n$-type semiconductor,pentavalent impurity atoms (like $P, As, Sb$) are added to the intrinsic semiconductor (like $Si$ or $Ge$).These impurity atoms provide extra electrons for conduction.The energy levels corresponding to these donor electrons are called donor energy levels $(E_D)$.These donor energy levels are located in the forbidden energy gap,just below the conduction band edge $(E_C)$.Because they are very close to the conduction band,the electrons can easily gain thermal energy at room temperature and jump into the conduction band to contribute to electrical conductivity.

In an $n$-type semiconductor,the free electrons donated by the impurity atoms occupy energy levels in:

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