In an ideal junction diode, the current flowing through $PQ$ is (resistance is $2 \text{ k}\Omega$).

Diffusion current in a $p-n$ junction is greater than the drift current in magnitude when:

$A$ realistic graph depicting the variation of the reciprocal of input resistance $(1/r_i)$ in an input characteristics measurement in a common emitter transistor configuration is:

In the following circuit,$PN$-junction diodes $D_1$,$D_2$,and $D_3$ are ideal. For the following potentials of $A$ and $B$,the correct increasing order of equivalent resistance between $A$ and $B$ will be:
$(i) V_A = -10 V, V_B = -5 V$
$(ii) V_A = -5 V, V_B = -10 V$
$(iii) V_A = -4 V, V_B = -12 V$

$Ge$ and $Si$ diodes start conducting at $0.3\,V$ and $0.7\,V$ respectively. In the following figure,if the $Ge$ diode connection is reversed,the value of $V_0$ changes by: ...... $V$ (assume that the $Ge$ diode has a large breakdown voltage).

The current $i$ in the network is: (in $A$)