Mobilities of electrons and holes in a sample | vedclass

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(B) The conductivity $\sigma$ of an intrinsic semiconductor is given by the formula:$\sigma = e(n_e \mu_e + n_h \mu_h)$Given:$e = 1.6 	imes 10^{-19}

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(B) The conductivity $\sigma$ of an intrinsic semiconductor is given by the formula:$\sigma = e(n_e \mu_e + n_h \mu_h)$Given:$e = 1.6 	imes 10^{-19} \, C$$n_e = n_h = 2.5 	imes 10^{19} \, /m^3$$\mu_e = 0.35 \, m^2/V-s$$\mu_h = 0.18 \, m^2/V-s$Substituting the values:$\sigma = 1.6 	imes 10^{-19} 	imes (2.5 	imes 10^{19} 	imes 0.35 + 2.5 	imes 10^{19} 	imes 0.18)$$\sigma = 1.6 	imes 10^{-19} 	imes 2.5 	imes 10^{19} 	imes (0.35 + 0.18)$$\sigma = 1.6 	imes 2.5 	imes 0.53$$\sigma = 4 	imes 0.53 = 2.12 \, S/m$

Mobilities of electrons and holes in a sample of intrinsic $Ge$ at room temperature are $0.35 \, m^2/V-s$ and $0.18 \, m^2/V-s$ respectively. If the electron and hole densities are each equal to $2.5 \times 10^{19} \, /m^3$,the $Ge$ conductivity will be.....$S/m$ (in $.12$)

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