On adjusting the $P-N$ junction diode in forward biased,what happens to the depletion layer and the resistance?

When a reverse bias is applied to a p-n junction, it . . . . . . .

In a $p-n$ junction, an electric field of $5 \times 10^5 \ V/m$ exists in the depletion region. The minimum kinetic energy of a conduction electron, in order to diffuse from $n$-side to the $p$-side, is found to be $3.2 \times 10^{-20} \ J$. The width of the depletion region is,

The current $I$ through the $10\, \Omega$ resistor in the given circuit is.......$mA$.

The value of net resistance of the network as shown in the given figure is:

$A$ $p-n$ junction diode is connected to a battery of emf $5.7 \ V$ in series with a resistor of $5 \ k\Omega$ such that it is forward biased. If the barrier potential of the diode is $0.7 \ V$,neglecting the diode resistance,the current in the circuit is: