Reverse bias applied to a junction diode

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Question

(B) In a $p-n$ junction diode,when reverse bias is applied,the $p$-type material is connected to the negative terminal of the battery,which pulls the

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raises the potential barrier

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(B) In a $p-n$ junction diode,when reverse bias is applied,the $p$-type material is connected to the negative terminal of the battery,which pulls the holes away from the junction.Similarly,the $n$-type material is connected to the positive terminal,which pulls the electrons away from the junction.As a result,the width of the depletion region increases.This widening of the depletion region leads to an increase in the potential barrier,making it more difficult for charge carriers to cross the junction.

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