$A$ semiconductor is damaged by a strong current due to:

Consider the following statements $A$ and $B$ and identify the correct choice from the given answers:
$A:$ The width of the depletion layer in a $P-N$ junction diode increases in forward bias.
$B:$ In an intrinsic semiconductor,the Fermi energy level is exactly in the middle of the forbidden gap.

The change in current through a junction diode is $12 \, mA$ when the forward bias voltage is changed by $0.6 \, V$. The dynamic resistance is

Which of the following statements concerning the depletion zone of an unbiased $PN$ junction is (are) true?
$(A)$ The width of the zone is independent of the densities of the dopants (impurities).
$(B)$ The width of the zone is dependent on the densities of the dopants.
$(C)$ The electric field in the zone is produced by the ionized dopant atoms.
$(D)$ The electric field in the zone is provided by the electrons in the conduction band and the holes in the valence band.

If $p-n$ junction diode is reverse biased,then:

In a $P-N$ junction,avalanche current flows in the circuit when the biasing is: