Suppose a pure $Si$ crystal has $5 \times 10^{28}$ atoms $m^{-3}$. It is doped by $1$ ppm concentration of pentavalent $As$. Calculate the number of holes. Given that $n_i = 1.5 \times 10^{16} m^{-3}$.

The temperature $(T)$ dependence of resistivity $(\rho)$ of a semiconductor is represented by

$A$ semiconductor is placed in an electric field. Let the number density of charge carriers be $n$ and the average drift velocity be $v$. If the temperature is increased,then:

The rate of recombination or generation of charge carriers in a semiconductor is governed by the law$(s)$ of:

Out of the following impurities, which impurity is not a trivalent?

$A$ potential difference of $2.5 \,V$ is applied across the faces of a germanium crystal plate. The face area of the crystal is $1 \,cm^2$ and its thickness is $1.0 \,mm$. The free electron concentration in germanium is $2 \times 10^{19} \,m^{-3}$ and the electron and hole mobilities are $0.33 \,m^2/V \cdot s$ and $0.17 \,m^2/V \cdot s$ respectively. The current across the plate will be .......... $A$.