The cause of the potential barrier in a P-N j | vedclass

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(D) When a $P-N$ junction is formed,electrons diffuse from the $n$-region to the $p$-region and holes diffuse from the $p$-region to the $n$-region. D

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Concentration of positive and negative charges near the junction

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(D) When a $P-N$ junction is formed,electrons diffuse from the $n$-region to the $p$-region and holes diffuse from the $p$-region to the $n$-region. Due to this diffusion,the $n$-side near the junction becomes positively charged (due to donor ions) and the $p$-side near the junction becomes negatively charged (due to acceptor ions). This accumulation of positive and negative charges near the junction creates an electric field,which opposes further diffusion of charge carriers. This region of immobile ions is called the depletion layer,and the potential difference created across it is known as the potential barrier.

The cause of the potential barrier in a $P-N$ junction diode is

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