The concentration of electrons in an intrinsic semiconductor is $6 \times 10^{15} \,m^{-3}$. On doping with an impurity, the electron concentration increases to $4 \times 10^{22} \,m^{-3}$. In thermal equilibrium, the concentration of the holes in the doped semiconductor is:

  • A
    $18 \times 10^{-8} \,m^{-3}$
  • B
    $1.5 \times 10^{-7} \,m^{-3}$
  • C
    $9 \times 10^8 \,m^{-3}$
  • D
    $\frac{2}{3} \times 10^7 \,m^{-3}$

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