The current through the ammeter (neglecting internal resistance) in the following circuit is

The breakdown in a reverse biased $p-n$ junction diode is more likely to occur due to

The curve between charge density $\rho$ and distance $r$ near a $p$ - $n$ junction is best represented by

The voltage-current characteristic of a diode during forward bias is given by $I = 7.8 \times 10^{-5} e^{6.5 V_D}$, where $I$ is the current in $mA$ and $V_D$ is the diode voltage in $V$. Find the dynamic resistance of the diode in $\Omega$, when the current is $4 \ mA$.

For a diode connected in parallel with a resistor,which is the most likely current $I$-voltage $V$ characteristic?

The current through an ideal $PN-$ junction diode shown in the following circuit diagram will be.......$mA$.