The depletion layer in the p-n junction is ca | vedclass

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(B) When a $p-n$ junction is formed,there is a concentration gradient of charge carriers across the junction. Holes diffuse from the $p$-side to the $

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diffusion of charge carriers

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(B) When a $p-n$ junction is formed,there is a concentration gradient of charge carriers across the junction. Holes diffuse from the $p$-side to the $n$-side,and electrons diffuse from the $n$-side to the $p$-side. As these charge carriers cross the junction,they recombine near the junction interface. This recombination leaves behind immobile ionized impurity atoms (negative ions on the $p$-side and positive ions on the $n$-side). This region,which is depleted of mobile charge carriers,is known as the depletion layer.

The depletion layer in the $p-n$ junction is caused by

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