The electron mobility in N-type germanium is | vedclass

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(D) The conductivity $\sigma$ of an $N$-type semiconductor is given by the formula: $\sigma = e n_e \mu_e$,where $e$ is the elementary charge,$n_e$ is

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$10^{16} \ cm^{-3}$

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(D) The conductivity $\sigma$ of an $N$-type semiconductor is given by the formula: $\sigma = e n_e \mu_e$,where $e$ is the elementary charge,$n_e$ is the electron concentration (impurity concentration),and $\mu_e$ is the electron mobility.Given: $\sigma = 6.24 \ mho/cm$,$\mu_e = 3900 \ cm^2/V \cdot s$,and $e = 1.6 	imes 10^{-19} \ C$.Rearranging the formula to solve for $n_e$:$n_e = \frac{\sigma}{e \mu_e}$Substituting the values:$n_e = \frac{6.24}{1.6 	imes 10^{-19} 	imes 3900}$$n_e = \frac{6.24}{6240 	imes 10^{-19}}$$n_e = \frac{6.24}{6.24 	imes 10^{-16}}$$n_e = 10^{16} \ cm^{-3}$.

The electron mobility in $N$-type germanium is $3900 \ cm^2/V \cdot s$ and its conductivity is $6.24 \ mho/cm$. If the effect of holes is negligible,what is the impurity concentration?

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