The energy of a photon in a monochromatic light of wavelength $621 \ nm$ matches with the band gap of a semiconducting material. Then the minimum energy required to create an electron-hole pair from the semiconductor is
[Take $hc = 1242 \ eV-nm$,where $h$ is Planck's constant and $c$ is speed of light in vacuum] (in $eV$)

When a $p-n$ junction diode is in forward bias,which type of charge carriers flows in the connecting wire?

Which of the following statements concerning the depletion zone of an unbiased $PN$ junction is (are) true?
$(A)$ The width of the zone is independent of the densities of the dopants (impurities).
$(B)$ The width of the zone is dependent on the densities of the dopants.
$(C)$ The electric field in the zone is produced by the ionized dopant atoms.
$(D)$ The electric field in the zone is provided by the electrons in the conduction band and the holes in the valence band.

If a $p-n$ junction is forward biased,then which of the following figures gives the correct direction of current inside the semiconductor?

For the diode,the characteristic curves are given at different temperatures. The relation between the temperatures is

What is the current through an ideal $PN-$ junction diode shown in the figure below? (in $mA$)