The majority charge carriers in $p$-type and $n$-type semiconductors are respectively:

Which of the statements given is true for a $p$-type semiconductor?

In the energy band diagram of a material shown below,the open circles and filled circles denote holes and electrons respectively. The material is a/an

The valence of an impurity added to germanium crystal in order to convert it into a $P-$type semiconductor is

In an $N$-type $Ge$ semiconductor,the mobility of electrons is $5000 \ cm^2/V \cdot s$ and the conductivity is $5 \ mho/cm$. If the effect of holes is negligible,what is the concentration of impurity atoms?

$A$ $P$-type semiconductor has acceptor levels $57 \; meV$ above the valence band. The maximum wavelength of light required to create a hole is (Planck's constant $h = 6.6 \times 10^{-34} \; J \cdot s$, speed of light $c = 3 \times 10^8 \; m/s$)