The photodiode is made of a material with a band gap of $2.0\, eV$. The minimum frequency of the radiation that can be absorbed by the material is nearly

  • A
    $1\times10^{14}\, Hz$
  • B
    $20\times10^{14}\, Hz$
  • C
    $10\times10^{14}\, Hz$
  • D
    $5\times10^{14}\, Hz$

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Similar Questions

Assertion: $A$ $P-N$ junction diode is used in reverse bias to detect the intensity of light.
Reason: In reverse bias condition,current is small but it is more sensitive to changes in intensity of incident light.

Explain the construction and working of a photodiode.

To measure light intensity,we use:

If a semiconductor photodiode can detect a photon with a maximum wavelength of $400\, nm$, then its band gap energy is (Given: Planck's constant $h = 6.63 \times 10^{-34}\, J \cdot s$, Speed of light $c = 3 \times 10^{8}\, m/s$) (in $ eV$)

$A$ $p-n$ junction is fabricated from a semiconductor with a band gap of $2.8 \ eV$. What approximate wavelength can it $NOT$ detect (in $nm$)?
[Use $h = 6 \times 10^{-34} \ J \cdot s$ and $c = 3 \times 10^8 \ m/s$]

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