The reading of the ammeter for a silicon diode in the given circuit is ....... $mA$.

In the given figure,a diode $D$ is connected to an external resistance $R = 100 \,\Omega$ and an $e.m.f.$ of $3.5 \,V$. If the barrier potential developed across the diode is $0.5 \,V$,the current in the circuit will be ........ $mA$.

Statement $I :$ When a $Si$ sample is doped with Boron,it becomes $P$-type and when doped by Arsenic it becomes $N$-type semiconductor such that $P$-type has excess holes and $N$-type has excess electrons.
Statement $II$ : When such $P$-type and $N$-type semiconductors are fused to make a junction,a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements,choose the most appropriate answer from the options given below.

In a $P-N$ junction,which of the following statements is correct regarding the potential?

Find the magnitude of current in the given circuit. (in $A$)

Two $PN$-junctions can be connected in series by three different methods as shown in the figure. If the potential difference across the junctions is the same,then the correct connections will be: