When a p-n diode is reverse biased,then | vedclass

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(B) When a $p-n$ junction is reverse biased,the negative terminal of the battery is connected to the $p$-side and the positive terminal to the $n$-sid

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the depletion region is increased

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(B) When a $p-n$ junction is reverse biased,the negative terminal of the battery is connected to the $p$-side and the positive terminal to the $n$-side.This causes the majority charge carriers to move away from the junction.As a result,the width of the depletion region increases.Consequently,the height of the potential barrier also increases,which opposes the flow of majority charge carriers.

When a $p-n$ diode is reverse biased,then

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