When a $PN$ junction diode is reverse biased,

  • A
    Electrons and holes are attracted towards each other and move towards the depletion region
  • B
    Electrons and holes move away from the junction depletion region
  • C
    Height of the potential barrier decreases
  • D
    No change in the current takes place

Explore More

Similar Questions

What is breakdown voltage and saturation current?

The length of a germanium rod is $0.925 \ cm$ and its area of cross-section is $1 \ mm^2$. If for germanium $n_i = 2.5 \times 10^{19} \ m^{-3}$,$\mu_h = 0.19 \ m^2/V\cdot s$,and $\mu_e = 0.39 \ m^2/V\cdot s$,then the resistance of the rod is:

The $I-V$ characteristic of a $P-N$ junction diode is shown in the figure. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $1\;V$ is applied is.......$\Omega$.

Two identical $P-N$ junctions are connected in series with a battery in three ways as shown in the figure. In which two circuits will the potential difference across the $P-N$ junctions be equal?

Difficult
View Solution

Find the current $i$ in the circuit shown.

Difficult
View Solution

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo