When a forward bias is applied to a $p-n$ junction,it

If the diodes are ideal in the circuit given below,then the current through the cell is (in $A$)

In a $PN-$junction diode:

In the given figure,each diode has a forward bias resistance of $30\, \Omega$ and infinite resistance in reverse bias. The current ${I}_{1}$ will be $....\,A$.

The approximate ratio of resistances in the forward and reverse bias of the $PN$-junction diode is

Which of the following is correct with respect to the following statements? Due to diffusion of electrons from $n$ to $p$-side:
$I$. electrons are accumulated in the depletion region.
$II$. electron drift current is from $p$-side to $n$-side.
$III$. an ionised donor is left in the $n$-region.
$IV$. electrons of $n$-side come to $p$-side and electron-hole combination takes place in $p$-side.
Select the correct option from the following.