$A$ positive hole in a semiconductor is

Pure $Si$ at $500\, K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16}\, m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22}\, m^{-3}$. The doped semiconductor is of

In an intrinsic semiconductor,the energy gap $E_{g}$ is $1.2 \; eV$. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at $600 \; K$ and that at $300 \; K$? Assume that the temperature dependence of intrinsic carrier concentration $n_{i}$ is given by $n_{i} = n_{0} \exp \left(-\frac{E_{g}}{2 k_{B} T}\right)$,where $n_{0}$ is a constant.

If the ratio of the number density of electrons to the number density of holes in a semiconductor is $7/5$ and the ratio of their currents is $7/4$,what is the ratio of their drift velocities?

Which of the following is an inorganic compound semiconductor?

In a $p-$type semiconductor, which of the following statements is true?