Pure Si at 500, K has equal number of electro | vedclass

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(A) $p-$type semiconductor is obtained when $Si$ or $Ge$ is doped with a trivalent impurity like Indium $(In)$.Given:Intrinsic carrier concentration,$

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$p-$ type having electron concentration,$n_e = 5 	imes 10^9\, m^{-3}$

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(A) $p-$type semiconductor is obtained when $Si$ or $Ge$ is doped with a trivalent impurity like Indium $(In)$.Given:Intrinsic carrier concentration,$n_i = 1.5 	imes 10^{16}\, m^{-3}$New hole concentration,$n_h = 4.5 	imes 10^{22}\, m^{-3}$Using the law of mass action for semiconductors:$n_e \cdot n_h = n_i^2$Substituting the values:$n_e = \frac{n_i^2}{n_h} = \frac{(1.5 	imes 10^{16})^2}{4.5 	imes 10^{22}}$$n_e = \frac{2.25 	imes 10^{32}}{4.5 	imes 10^{22}}$$n_e = 0.5 	imes 10^{10} = 5 	imes 10^9\, m^{-3}$Since $n_h > n_e$,the semiconductor is of $p-$type.

Pure $Si$ at $500\, K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16}\, m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22}\, m^{-3}$. The doped semiconductor is of

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