$A$ $p-n$ junction diode is reverse biased with a voltage of $8 \, V$. If the resistance of the diode is $4 \times 10^7 \, \Omega$, then the reverse saturation current is: (in $ \, \mu A$)

Assuming an ideal diode,find the current through the $1 \Omega$ resistance in the circuit shown in the figure.

What is a depletion layer? What is the order of its thickness?

$Ge$ and $Si$ diodes start conducting at $0.3\,V$ and $0.7\,V$ respectively. In the following figure,if the $Ge$ diode connection is reversed,the value of $V_0$ changes by: ...... $V$ (assume that the $Ge$ diode has a large breakdown voltage).

$A$ potential barrier of $0.4 \,V$ exists across a p-n junction. An electron enters the junction from the $n$-side with a speed of $6.0 \times 10^{5} \,ms^{-1}$. The speed with which the electron enters the $p$-side will be $\frac{x}{3} \times 10^{5} \,ms^{-1}$. The value of $x$ is ..............
(Given: mass of electron $= 9 \times 10^{-31} \,kg$,charge on electron $= 1.6 \times 10^{-19} \,C$.)

What is the current through the battery in the circuit shown below (in $\text{A}$)?