$A$ junction diode has a resistance of $25 \Omega$ when forward biased and $2500 \Omega$ when reverse biased. The current in the diode, for the arrangement shown, will be

  • A
    $\frac{1}{15} \text{ A}$
  • B
    $\frac{1}{7} \text{ A}$
  • C
    $\frac{1}{25} \text{ A}$
  • D
    $\frac{1}{180} \text{ A}$

Explore More

Similar Questions

Can the potential barrier across a $p-n$ junction be measured by simply connecting a voltmeter across the junction?

Explain the forward and reverse characteristics of the $p-n$ junction diode by drawing the circuit and graph.

The depletion layer in a silicon diode is $1 \, \mu m$ wide and the knee potential is $0.6 \, V$. The electric field in the depletion layer is:

Which of the following statements concerning the depletion zone of an unbiased $PN$ junction is (are) true?
$(A)$ The width of the zone is independent of the densities of the dopants (impurities).
$(B)$ The width of the zone is dependent on the densities of the dopants.
$(C)$ The electric field in the zone is produced by the ionized dopant atoms.
$(D)$ The electric field in the zone is provided by the electrons in the conduction band and the holes in the valence band.

Which one of the following represents a forward-biased diode?

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo