The depletion layer in a silicon diode is 1 , | vedclass

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(D) The electric field $E$ in the depletion layer is given by the formula $E = \frac{V}{d}$, where $V$ is the potential difference (knee potential) an

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$6 	imes 10^{5} \, V/m$

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(D) The electric field $E$ in the depletion layer is given by the formula $E = \frac{V}{d}$, where $V$ is the potential difference (knee potential) and $d$ is the width of the depletion layer.Given:Potential $V = 0.6 \, V$Width $d = 1 \, \mu m = 1 	imes 10^{-6} \, m$Substituting the values:$E = \frac{0.6 \, V}{1 	imes 10^{-6} \, m} = 0.6 	imes 10^{6} \, V/m = 6 	imes 10^{5} \, V/m$.Therefore, the correct option is $D$.

The depletion layer in a silicon diode is $1 \, \mu m$ wide and the knee potential is $0.6 \, V$. The electric field in the depletion layer is:

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