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(B) $1$. Germanium $(Ge)$ is a group $14$ element. Indium $(In)$ is a group $13$ element. Doping $Ge$ with $In$ creates a p-type semiconductor. Thus,

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$X$ is p-type, $Y$ is n-type and the junction is reverse biased.

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(B) $1$. Germanium $(Ge)$ is a group $14$ element. Indium $(In)$ is a group $13$ element. Doping $Ge$ with $In$ creates a p-type semiconductor. Thus, $X$ is p-type.$2$. Arsenic $(As)$ is a group $15$ element. Doping $Ge$ with $As$ creates an n-type semiconductor. Thus, $Y$ is n-type.$3$. The junction formed is a p-n junction.$4$. In the circuit diagram, the p-side $(X)$ is connected to the negative terminal of the battery and the n-side $(Y)$ is connected to the positive terminal of the battery.$5$. When the p-side is connected to the negative terminal and the n-side is connected to the positive terminal, the p-n junction is reverse biased.

$A$ semiconductor $X$ is made by doping a germanium crystal with indium $(Z = 49)$. $A$ second semiconductor $Y$ is made by doping germanium crystal with arsenic $(Z = 33)$. Both are joined end to end and connected to a battery as shown. Which of the following statements is correct?

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