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(B) In a $p-n$ junction,the total current is the sum of diffusion current $(I_d)$ and drift current $(I_s)$.In the unbiased state,$I_d = I_s$,resultin

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if the junction is reverse biased

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(B) In a $p-n$ junction,the total current is the sum of diffusion current $(I_d)$ and drift current $(I_s)$.In the unbiased state,$I_d = I_s$,resulting in zero net current.When the junction is forward biased,the potential barrier decreases,which significantly increases the diffusion of majority charge carriers across the junction. Thus,the diffusion current becomes much larger than the drift current $(I_d > I_s)$.When the junction is reverse biased,the potential barrier increases,which suppresses the diffusion of majority charge carriers. However,the drift current (caused by minority charge carriers) remains relatively constant. In this state,the diffusion current becomes negligible,making the drift current larger than the diffusion current $(I_s > I_d)$.

The magnitude of the diffusion current in a $p-n$ junction is smaller than the magnitude of the drift current:

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