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(B) $P$-type semiconductor is formed by doping an intrinsic semiconductor (like silicon or germanium) with a trivalent impurity (like boron,aluminum,o

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Obtained by doping germanium with boron

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(B) $P$-type semiconductor is formed by doping an intrinsic semiconductor (like silicon or germanium) with a trivalent impurity (like boron,aluminum,or indium).Since boron is a trivalent element,it creates a hole in the crystal lattice,which acts as a charge carrier.It is important to note that although it is called a $P$-type semiconductor,it is electrically neutral because the number of positive holes is balanced by the negative ions of the acceptor atoms.Therefore,option $B$ is the correct description of how it is obtained.

$A$ $P$-type semiconductor is:

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